Power semiconductor switch

US6798040B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventor

• Daniel Reznik · Berlin, DE

Key dates

• Filing date: Jun 4, 2001
• Grant date: Sep 28, 2004
• Expiry date: Jun 4, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/393

Abstract

An IGBT structure includes successive regions whose conductivities have alternating signs. The structure is dimensioned for punch-through and is provided with two buffer layers. As a result, the component becomes symmetrically blocking and is suitable as a semiconductor switch, e.g., for converters.