Patent · US Expired

High speed sense amplifier

US6798252B2 · kind B2 · utility

1Cited by

3References

14Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Martin Ekkart · Munich, DE
Riccio Ettore · Munich, DE
Michael Moyal · Netanya, IL
Dirk Schulz · Meckenheim, DE

Key dates

Filing date	Oct 28, 2002
Grant date	Sep 28, 2004
Priority date	—
Expiry date	Apr 25, 2023

Classification

Technology area (CPC G)Physics
CPC primaryG11C2207/063
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A high-speed sense current amplifier with a low power consumption for a memory cell, the sense current amplifier having: a first current mirror circuit, which amplifies a memory signal current received from the memory cell via a memory signal line and outputs it at a signal output of the sense current amplifier; a second current mirror circuit, which generates a setting current in a manner dependent on the received memory signal current; and an adjustable reference current source, which outputs a reference current to the signal output of the sense current amplifier, the magnitude of the output reference current being set, via a setting line, in a manner dependent on the setting current generated by the second current mirror circuit.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.