In-situ method and apparatus for end point detection in chemical mechanical polishing
US6798529B2 · kind B2 · utility
16Cited by
40References
27Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Dec 21, 2001 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Dec 21, 2021 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B49/12
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method and apparatus for providing in-situ monitoring of the removal of materials in localized regions on a semiconductor wafer or substrate during chemical mechanical polishing (CMP) is provided. In particular, the method and apparatus of the present invention provides for detecting the differences in reflectance between the different materials within certain localized regions or zones on the surface of the wafer. The differences in reflectance are used to indicate the rate or progression of material removal in each of the certain localized zones.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.