Magnetoresistive effect element having a ferromagnetic tunnel junction film with an oxide or nitride of a metallic material
US6798626B2 · kind B2 · utility
8Cited by
8References
3Claims
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Key dates
| Filing date | Feb 3, 2003 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Feb 3, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49034
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive effect element which is easy to manufacture and in which a sense current is prevented from bypassing a barrier layer is provided. Also provided are a method for manufacturing the element and a magnetic recording apparatus utilizing the element. This magnetoresistive effect element utilizes an MTJ film which comprises, for forming its basic structure, a free layer, a barrier layer, a pinned layer and a pinning layer, wherein an oxide or a nitride layer is formed by oxidizing or nitriding metallic materials constituting the pinned layer and pinning layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.