GaInNAsSb quantum well semiconductor devices
US6798809B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 16, 2002 |
| Grant date | Sep 28, 2004 |
| Priority date | — |
| Expiry date | Oct 15, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2302/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In connection with an optical-electronic semiconductor device, improved photoluminescent output is provided at wavelengths beyond 1.3 m. According to one aspect, Sb is used in, e.g. the active region of a GaInNAs-based quantum well laser diode with GaNAs-based barrier layers. Adding a small amount of Sb increases photoluminescence of the device while increasing the wavelength. Sb is used both as a surfactant, improving N and In incorporation into the active region, and an alloy constituent for red-shifting the wavelength of the device. In example implementations, both edge emitting laser devices and vertical cavity surface emitting laser (VCSEL) devices can be grown with room temperature emission from 1.3 to 1.6 &mgr;m.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.