Axial gradient transport apparatus and process
US6800136B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2002 |
| Grant date | Oct 5, 2004 |
| Priority date | — |
| Expiry date | Dec 26, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1032
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed is an apparatus and a method for growing single crystals of materials such as silicon carbide through axial gradient transport. A source of the material (10) is placed at one end of a reaction chamber (2) opposite a seed crystal (13). Separate heating elements (16 and 60; 20 and 62) are positioned at opposite ends of the reaction chamber. The reaction chamber (2) is placed in a growth chamber (26). By appropriately controlling the pressure in the growth chamber (26) and the temperature of the heating elements (16, 20), including the temperature differential therebetween, a uniaxial temperature gradient is generated in the reaction chamber (2). In this manner, planar isotherms are generated and a high quality crystal can be grown through a physical vapor transport process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.