Techniques to characterize iso-dense effects for microdevice manufacture
US6800403B2 · kind B2 · utility
4Cited by
35References
12Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 18, 2002 |
| Grant date | Oct 5, 2004 |
| Priority date | — |
| Expiry date | Jan 2, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70625
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A technique is provided to define a pattern (100) on a substrate (70) that includes a dense region with a number of features (101) and an isolated feature region comprised of at least a part of one of the features (101). The dense feature region has a greater feature density than the isolated feature region. A reference feature (103) is measured at a number of different points relative to the isolated feature region and the dense feature region with a measurement tool (75). An iso-dense effect is determined from these measurements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.