Wavelength-independent exposure pattern generation method and exposure pattern generation system for lithography
US6800428B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2002 |
| Grant date | Oct 5, 2004 |
| Priority date | — |
| Expiry date | Nov 4, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70466
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of generating an exposure pattern for lithography to create a plurality of patterns arranged in a predetermined direction, comprises a step of counting the plurality of patterns along this predetermined direction, and generating a first enlarged pattern by moving the edges to a first direction along the predetermined direction for a pattern with an odd number, and by moving the edges to a second direction, which is opposite to the first direction, for a pattern with an even number, and a step of generating a second enlarged pattern by moving the edges to the second direction for the pattern with an odd number, and by moving the edges to the first direction for the pattern with an even number. And the first and second patterns are used for creating the plurality of original patterns in a lithography step using the respective enlarged patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.