III-nitride light emitting devices fabricated by substrate removal
US6800500B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2003 |
| Grant date | Oct 5, 2004 |
| Priority date | — |
| Expiry date | Jul 29, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32341
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A III-nitride light-emitting structure including a p-type layer, an n-type layer, and a light emitting layer is grown on a growth substrate. The III-nitride light-emitting structure is wafer bonded to a host substrate, then the growth substrate is removed. In some embodiments, a first electrical contact and first bonding layer are formed on the III-nitride light-emitting structure. A second bonding layer is formed on the host substrate. In such embodiments, wafer bonding the III-nitride light emitting structure to the host substrate comprises bonding the first bonding layer to the second bonding layer. After the growth substrate is removed, a second electrical contact may be formed on a side of the III-nitride light-emitting device exposed by removal of the growth substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.