Method of fabricating a MOS transistor with a drain extension and corresponding transistor

US6800514B2 · kind B2 · utility

Assignee

• STMicroelectronics SA

Inventors

• Thierry Schwartzmann · Le Versoud, FR
• Herve Jaouen · Meylan, FR

Key dates

• Filing date: Jun 27, 2002
• Grant date: Oct 5, 2004
• Expiry date: Jul 30, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/603

Abstract

A MOS transistor with a drain extension includes an isolation block on the upper surface of a semiconductor substrate. The isolation block has a first sidewall next to the gate of the transistor, and a second sidewall that is substantially parallel to the first sidewall. The isolation block further includes a drain extension zone in the substrate under the isolation block, and a drain region in contact with the drain extension zone. The drain region is in the substrate but is not covered by the isolation block.