Electrostatic discharge device protection structure
US6800516B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 21, 2003 |
| Grant date | Oct 5, 2004 |
| Priority date | — |
| Expiry date | Feb 2, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/151
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The problem of gate oxide damage as a result of electrostatic discharges has been overcome by including within the drain of the ESD protection device a region having very high defect density. Its depth within the drain is such that no action occurs when applied voltages are low. However, when a high voltage is applied, the depletion layer grows wide enough to touch this region thereby allowing substantial current flow into the substrate which results in lowering the voltage to a safe level. The high defect density region is formed through ion implantation of relatively heavy ions such as germanium. This is done after completion of the normal manufacturing process including SALICIDATION, no significant heating of the device after that being permitted.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.