Aluminum nitride sintered bodies and members for semiconductor-producing apparatuses
US6800576B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2001 |
| Grant date | Oct 5, 2004 |
| Priority date | — |
| Expiry date | Feb 27, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T279/23
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
An aluminum nitride sintered body contains aluminum nitride as a main component, at least one rare earth metal element in an amount of not less than 0.4 mol % and not more than 2.0 mol % as calculated in the form of an oxide thereof and aluminum oxide component in an amount of not less than 0.5 mol % and not more than 2.0 mol %. Si content of the sintered body is not more than 80 ppm and an average particle diameter of aluminum nitride grains is not more than 3 &mgr;m. The aluminum nitride sintered body hardly peels aluminum nitride grains and exhibits high resistivity of at least 108 &OHgr;·cm even in a high temperature range of, for example, 300-500° C., as well as relatively high thermal conductivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.