Nondestructive characterization of thin films using measured basis spectra
US6800852B2 · kind B2 · utility
57Cited by
12References
55Claims
0Family size
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Key dates
| Filing date | Dec 27, 2002 |
| Grant date | Oct 5, 2004 |
| Priority date | — |
| Expiry date | Dec 27, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J49/14
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention provides for characterization of a film (e.g., thickness determination for a silicon oxynitride film) using a comparison process (e.g., a fitting process) to compare measured peak shapes for elemental and/or chemical species (e.g., Si peak shapes previously measured for a particular process to be monitored) to collected spectral data (e.g., using a non-linear least squares fitting algorithm).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.