Method of preparing indium phosphide heterojunction bipolar transistors
US6800879B2 · kind B2 · utility
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5Claims
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Key dates
| Filing date | Jan 8, 2002 |
| Grant date | Oct 5, 2004 |
| Priority date | — |
| Expiry date | Jan 8, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/854
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
InP heterojunction bipolar transistors having a base layer of InGaAs which are compositionally graded to engineer the bandgap of the base layer to be larger at the emitter/base junction than at the collector/base junction. The graded bandgap can increase DC current gain and speed of the device. A metalorganic chemical vapor deposition method of preparing InP heterojunction bipolar transistors having a base layer with a relatively high concentration of carbon dopant. The high carbon dopant concentration lowers the base sheet resistivity and turn-on voltage of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.