Barbara E. Landini
5Patents
4h-index
8Co-inventors
39Inventor score
Filing activity: Jun 24, 1999 → Dec 6, 2002
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6447604B1 | METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((AL,IN,GA)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES | Electricity | 158 | Expired |
| US6329088A | Silicon carbide epitaxial layers grown on substrates offcut towards <1100> | Emerging Cross-Sectional Technologies | 17 | Expired |
| US8212259B2 | III-V nitride homoepitaxial material of improved quality formed on free-standing (Al,In,Ga)N substrates | Electricity | 15 | Expired |
| US6641938B2 | Silicon carbide epitaxial layers grown on substrates offcut towards <1100> | Emerging Cross-Sectional Technologies | 7 | Expired |
| US6800879B2 | Method of preparing indium phosphide heterojunction bipolar transistors | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.