Voltage generation circuitry having temperature compensation
US6801454B2 · kind B2 · utility
62Cited by
4References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 1, 2002 |
| Grant date | Oct 5, 2004 |
| Priority date | — |
| Expiry date | Oct 1, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/12
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Techniques for producing and utilizing temperature compensated voltages to accurately read signals (e.g., voltages) representing data stored in memory cells of a memory system are disclosed. The memory system is, for example, a memory card. The magnitude of the temperature compensation can be varied or controlled in accordance with a temperature coefficient. These techniques are particularly well suited for used with memory cells that provide multiple levels of storage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.