Diaphragm-type semiconductor device and method for manufacturing diaphragm-type semiconductor device
US6802222B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 10, 2002 |
| Grant date | Oct 12, 2004 |
| Priority date | — |
| Expiry date | May 10, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/0073
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A diaphragm-type semiconductor device includes a semiconductor substrate, a surface of which is substantially flat, a diaphragm, which covers a circular pressure reference space located on the surface, and a circular electrode layer, a middle part of which is embedded in the diaphragm. The electrode layer is larger than the space and is coaxial with the space. Therefore, internal stress is balanced between inner and outer sides of the diaphragm, and a step formed at the outer edge of the top electrode layer is separated from the diaphragm. The device also includes a step adjuster around the space on the surface. Therefore, another step formed at the outer edge of the space disappears, and a new step is formed separately from the diaphragm at the outer edge of the step adjuster. With this structure, the diaphragm has a desired flatness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.