Method for cutting hard and brittle material
US6802928B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 26, 2003 |
| Grant date | Oct 12, 2004 |
| Priority date | — |
| Expiry date | Mar 26, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T156/12
- WIPO fieldOther special machines
- WIPO sectorMechanical engineering
Abstract
It is an object of the present invention to provide a method for slicing a hard and brittle material having a crystal structure, such as a silicon ingot, and more particularly a hard and brittle material cutting method which solves the problem of worsening variance in thickness, nanotopography, and wafer warpage. The inventors perfected the present invention upon discovering that when retainer plates are bonded to or pressed against the ends of an ingot, and simultaneous slicing with a wire saw is performed along with the retainer plates, a portion of increasing variance in the warpage, nanotopography, and thickness will appear in the portions corresponding to the retainer plates, resulting in a decrease in variance in wafer warpage, nanotopography, and thickness at the ends of the targeted ingot.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.