Resist composition and method for manufacturing semiconductor device using the resist composition
US6803170B2 · kind B2 · utility
2Cited by
3References
21Claims
0Family size
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Key dates
| Filing date | Aug 10, 2001 |
| Grant date | Oct 12, 2004 |
| Priority date | — |
| Expiry date | Dec 1, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/111
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A resist composition comprises: at least one type of a first compound having two or more intramolecular adamantyl structures represented by the chemical formula 1 below; a base resin; and a second compound which generates an acid by active beam irradiation. wherein X is —(OCO)m—(CH2)n—(COO)m—, where m=0 or 1 and n=0, 1, 2 or 3 provided when n=0, m=0; and Y and Z are H, OH, F, Cl, Br, R or COOR, where Y may be Z, or Y and Z may be introduced in a single adamantyl structure and R represents a straight or branched alkyl group having 1 to 8 carbon atoms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.