Methods for forming line patterns in semiconductor substrates
US6803176B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2002 |
| Grant date | Oct 12, 2004 |
| Priority date | — |
| Expiry date | Apr 3, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/40
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for forming a fine pattern in a semiconductor substrate, by coating a target layer to be etched on a semiconductor substrate with a resist composition including at least one compound capable of forming a photoresist pattern by a photolithography process, and a free radical initiator. The free radical initiator is capable of being decomposed by a thermal process at a temperature equal to or higher than the glass transition temperature of the at least one compound. A lithography process is performed on the resist compound layer to form a photoresist pattern. The resist compound layer having the photoresist pattern formed therein is heated to a temperature equal to or higher than the glass transition temperature of the at least one compound, and wherein a partial cross-linking reaction in the resist composition occurs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.