Inventor · Yongin-si, KR

Yool Kang

27Patents
5h-index
71Co-inventors
72Inventor score

Filing activity: Oct 2, 1998 → Jan 3, 2020

Most-cited inventions

PatentTitleAreaCited byStatus
US6485895B1 Methods for forming line patterns in semiconductor substrates Physics 37 Expired
US6803176B2 Methods for forming line patterns in semiconductor substrates Physics 12 Expired
US6753125B2 Photosensitive polymer having fused aromatic ring and photoresist composition containing the same Emerging Cross-Sectional Technologies 10 Expired
US6284438A Method for manufacturing a photoresist pattern defining a small opening and method for manufacturing semiconductor device using the same Physics 8 Expired
US7560768B2 Nonvolatile memory device and method of manufacturing the same Electricity 5 Active
US6300036A Photosensitive polymers and chemically amplified photoresist compositions using the same Emerging Cross-Sectional Technologies 5 Expired
US6114084A Chemically amplified resist composition Physics 5 Expired
US7862988B2 Method for forming patterns of semiconductor device Electricity 5 Active
US8431331B2 Method of forming fine patterns of semiconductor device by using double patterning process which uses acid diffusion Electricity 4 Active
US6280903A Chemically amplified resist composition Physics 4 Expired
US8173358B2 Method of forming fine patterns of a semiconductor device Emerging Cross-Sectional Technologies 4 Active
US8623739B2 Method of manufacturing semiconductor device using acid diffusion Electricity 4 Active
US6787287B2 Photosensitive polymers and resist compositions comprising the photosensitive polymers Emerging Cross-Sectional Technologies 3 Expired
US8227349B2 Method of forming a mask pattern, method of forming a minute pattern, and method of manufacturing a semiconductor device using the same Electricity 3 Active
US8314036B2 Methods of forming fine patterns of semiconductor device Electricity 2 Active
US7678650B2 Nonvolatile memory device and method of manufacturing the same Electricity 2 Active
US8778598B2 Method of forming fine patterns of semiconductor device by using double patterning process which uses acid diffusion Electricity 2 Active
US9892915B2 Hard mask composition, carbon nanotube layer structure, pattern forming method, and manufacturing method of semiconductor device Electricity 1 Active
US7842450B2 Method of forming a semiconductor device Electricity 0 Active
US8536347B2 Photoacid generator, chemically amplified resist composition including the same, and associated methods Physics 0 Active
US10236185B2 Method of forming patterns for semiconductor device Electricity 0 Active
US9613821B2 Method of forming patterns and method of manufacturing integrated circuit device Electricity 0 Active
US10712662B2 Methods of forming patterns using compositions for an underlayer of photoresist Physics 0 Active
US8987118B2 Method of fabricating semiconductor device Electricity 0 Active
US9337032B2 Method of forming pattern of semiconductor device Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.