Method of making an integrated photodetector in which a silicon nitride layer forms an anti-reflective film and part of multi-layer insulator within transistor structures

US6803249B2 · kind B2 · utility

Assignee

• STMICROELECTRONICS, INC. · US

Inventors

• Danielle A. Thomas · Dallas, US
• Gilles Thomas · Le Fontanil, FR

Key dates

• Filing date: Feb 4, 2003
• Grant date: Oct 12, 2004
• Expiry date: Feb 4, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/803

Abstract

A photodetector is integrated on a single semiconductor chip with bipolar transistors including a high speed poly-emitter vertical NPN transistor. The photodetector includes a silicon nitride layer serving as an anti-reflective film. The silicon nitride layer and oxide layers on opposite sides thereof insulate edges of a polysilicon emitter from the underlying transistor regions, minimizing the parasitic capacitance between the NPN transistor's emitter and achieving a high frequency response. The method of manufacture is compatible with existing BiCMOS process technology, the silicon nitride layer of the anti-reflective film being formed over the photodetector as well as regions of the chip that include the vertical NPN transistor and other circuit elements.