Method of fabricating a semiconductor device
US6803264B2 · kind B2 · utility
136Cited by
23References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2001 |
| Grant date | Oct 12, 2004 |
| Priority date | — |
| Expiry date | Feb 23, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device with high reliability is provided using an SOI substrate. When the SOI substrate is fabricated by using a technique typified by SIMOX, ELTRAN, or Smart-Cut, a single crystal semiconductor substrate having a main surface (crystal face) of a {110} plane is used. In such an SOI substrate, adhesion between a buried insulating layer as an under layer and a single crystal silicon layer is high, and it becomes possible to realize a semiconductor device with high reliability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.