Method to salicide source-line in flash memory with STI

US6803273B1 · kind B1 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Thomas M. Ambrose · Richardson, US
• Freidoon Mehrad · Plano, US
• Ming Yang · Baoshan, TW
• Lancy Tsung · Plano, US

Key dates

• Filing date: May 18, 2000
• Grant date: Oct 12, 2004
• Expiry date: May 18, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B69/00

Abstract

A method of forming a semiconductor component having a conductive line (24) and a silicide region (140) that crosses a trench (72). The method involves forming nitride sidewalls (130) to protect the stack during the silicidation process.