Method for depositing an adhesion/barrier layer to improve adhesion and contact resistance
US6803309B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 3, 2002 |
| Grant date | Oct 12, 2004 |
| Priority date | — |
| Expiry date | Aug 11, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28556
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming an adhesion/barrier liner with reduced fluorine contamination to improve adhesion and a specific contact resistance of metal interconnects includingproviding a semiconductor wafer having a process surface including an etched opening extending through a dielectric insulating layer thickness and in closed communication with a conductive underlayer surface; pre-heating the semiconductor wafer in a plasma reactor to a pre-heating temperature of at least about 400° C.; cleaning the etched opening according to a plasma assisted reactive pre-cleaning process (RPC) comprising nitrogen trifluoride (NF3); and, blanket depositing at least a first adhesion/barrier layer over the etched opening substantially free of fluorine containing residue.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.