Magnetic tunnel junction MRAM with improved stability
US6803615B1 · kind B1 · utility
169Cited by
8References
47Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2001 |
| Grant date | Oct 12, 2004 |
| Priority date | — |
| Expiry date | Jun 28, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An MRAM cell includes a pinned layer, a free layer, and a bit line with a magnetic sheath. The magnetic sheath allows a magnetic field to circulate in a loop around the bit line. The looping magnetic field can couple with the magnetic field of the free layer for enhanced stability with respect to stray magnetic fields and elevated temperatures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.