Systems and methods for photoresist strip and residue treatment in integrated circuit manufacturing
US6805139B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 19, 2000 |
| Grant date | Oct 19, 2004 |
| Priority date | — |
| Expiry date | Dec 28, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Plasma systems and methods for supplying activation energy to remove cross-linked photoresist crust using ion bombardment of the substrate from a plasma, at reduced temperature, achieved in part by operating the processing chamber at low pressures. Reduced temperatures prevent “popping” of the photoresist which can cause particulate contamination. The gas flow may comprise a principal gas, an inert diluent gas, and an additive gas. Principal gases for HDIS may comprise oxygen, hydrogen, and water vapor at pressures less than about 200 mTorr and a bias may be applied to the substrate support. When low-k dielectric material is present on vertical surfaces, reduced ion bombardment on vertical surfaces may be used, and a protective layer may be deposited on those surfaces.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.