Fluxless bumping process using ions
US6805279B2 · kind B2 · utility
13Cited by
9References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2002 |
| Grant date | Oct 19, 2004 |
| Priority date | — |
| Expiry date | Jun 27, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/3489
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process including providing a semiconductor device including a bond pad, and an under bump metallurgy overlying the bond pad. Forming a solder structure over the under bump metallurgy, and wherein the solder structure includes an outer layer including tin oxide. Producing a plasma from at least one of CF4, SF4, and H2 and exposing the solder structure to the plasma. Heating the solder structure and cooling the same to provide a solder bump on the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.