Method for supplying CZ material
US6805746B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 3, 2002 |
| Grant date | Oct 19, 2004 |
| Priority date | — |
| Expiry date | Aug 6, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1072
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Granules/lumps poly-silicon raw material, low in raw material cost and free of the hazard of crack is additionally charged into a crucible in a safe and steady manner. In a single crystal growth according to the CZ method, poly-silicon raw material ins initially charged into a crucible. Above the initially charged poly-silicon raw material, a heat resistant tubular container is placed. The granules/lumps poly-silicon raw material for use in additional charging is charged inot the tubular container. The poly-silicon raw material initially charged into the crucible is melted. The poly-silicon raw material in the tubular container gradually and spontaneously comes down into the crucible, as the bulk of poly-silicon raw material is decreased according to the melting of the initially charged raw material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.