Method of plasma etching of high-K dielectric materials with high selectivity to underlying layers
US6806095B2 · kind B2 · utility
10Cited by
16References
17Claims
0Family size
Inventors
Key dates
| Filing date | Mar 6, 2002 |
| Grant date | Oct 19, 2004 |
| Priority date | — |
| Expiry date | Mar 6, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31122
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of etching high dielectric constant materials using halogen gas and reducing gas chemistry. An embodiment of the method is accomplished using a 20 to 300 sccm of chlorine and 2 to 200 sccm of carbon monoxide, regulated to a total chamber pressure of 2-100 mTorr to etch a hafnium oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.