Padmapani Nallan
33Patents
15h-index
31Co-inventors
77Inventor score
Filing activity: Aug 8, 1997 → Aug 14, 2006
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6642127B2 | Method for dicing a semiconductor wafer | Electricity | 227 | Expired |
| US6583065B1 | Sidewall polymer forming gas additives for etching processes | Electricity | 65 | Expired |
| US6759263B2 | Method of patterning a layer of magnetic material | Emerging Cross-Sectional Technologies | 65 | Expired |
| US6964928B2 | Method for removing residue from a magneto-resistive random access memory (MRAM) film stack using a dual mask | Electricity | 33 | Expired |
| US6531404B1 | Method of etching titanium nitride | Electricity | 26 | Expired |
| US6322714A | Process for etching silicon-containing material on substrates | Emerging Cross-Sectional Technologies | 23 | Expired |
| US6984585B2 | Method for removal of residue from a magneto-resistive random access memory (MRAM) film stack using a sacrificial mask layer | Electricity | 22 | Expired |
| US6399507B1 | Stable plasma process for etching of films | Electricity | 20 | Expired |
| US6767824B2 | Method of fabricating a gate structure of a field effect transistor using an alpha-carbon mask | Emerging Cross-Sectional Technologies | 19 | Expired |
| US6132631A | Anisotropic silicon nitride etching for shallow trench isolation in an high density plasma system | Electricity | 19 | Expired |
| US6893893B2 | Method of preventing short circuits in magnetic film stacks | Electricity | 19 | Expired |
| US6368978B1 | Hydrogen-free method of plasma etching indium tin oxide | Emerging Cross-Sectional Technologies | 18 | Expired |
| US6759340B2 | Method of etching a trench in a silicon-on-insulator (SOI) structure | Electricity | 18 | Expired |
| US6440870B1 | Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures | Electricity | 16 | Expired |
| US6855643B2 | Method for fabricating a gate structure | Electricity | 16 | Expired |
| US7320942B2 | Method for removal of metallic residue after plasma etching of a metal layer | Emerging Cross-Sectional Technologies | 13 | Expired |
| US6423644B1 | Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures | Electricity | 13 | Expired |
| US6942813B2 | Method of etching magnetic and ferroelectric materials using a pulsed bias source | Electricity | 12 | Expired |
| US6902681B2 | Method for plasma etching of high-K dielectric materials | Electricity | 12 | Expired |
| US6660127B2 | Apparatus for plasma etching at a constant etch rate | Electricity | 11 | Expired |
| US6759286B2 | Method of fabricating a gate structure of a field effect transistor using a hard mask | Electricity | 11 | Expired |
| US6806095B2 | Method of plasma etching of high-K dielectric materials with high selectivity to underlying layers | Electricity | 10 | Expired |
| US7094704B2 | Method of plasma etching of high-K dielectric materials | Electricity | 9 | Expired |
| US7105361B2 | Method of etching a magnetic material | Electricity | 9 | Expired |
| US7217665B2 | Method of plasma etching high-K dielectric materials with high selectivity to underlying layers | Electricity | 7 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.