Process for producing polycrystalline silicon film by crystallizing on amorphous silicon film by light irradiation
US6806099B2 · kind B2 · utility
16Cited by
8References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2002 |
| Grant date | Oct 19, 2004 |
| Priority date | — |
| Expiry date | Jan 31, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6745
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a process for producing a polycrystal silicon film which comprises a step of forming a polycrystal silicon film by light irraditation of a silicon film set on a substrate, and a step of selecting substrate samples having an average grain size in a plane of the sample of 500 nm or more. According to the present invention, stable production of a high-performance poly-silicon TFT liquid crystal display becomes possible.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.