METHOD FOR REDUCING THE CONTACT RESISTANCE IN ORGANIC FIELD-EFFECT TRANSISTORS BY APPLYING A REACTIVE INTERMEDIATE LAYER WHICH DOPES THE ORGANIC SEMICONDUCTOR LAYER REGION-SELECTIVELY IN THE CONTACT REGION

US6806124B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Hagen Klauk · Erlangen, DE
• Günter Schmid · Hemhofen, DE
• Tarik Kriem · Erlangen, DE

Key dates

• Filing date: Oct 31, 2002
• Grant date: Oct 19, 2004
• Expiry date: Oct 31, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K2102/103

Abstract

A semiconductor device is fabricated and contains a first body made of an organic semiconductor material and a second body made of an electrically conductive contact material, that form a common contact area. First, a body is produced on a substrate, which body may be composed of the contact material or the organic semiconductor material, and an intermediate layer is applied thereon, the intermediate layer containing a reactive dopant. Afterward, a body made of the organic semiconductor material or the contact material is fabricated on the intermediate layer. The dopant contained in the intermediate layer effects a region-selective doping of the organic semiconductor material and, as a consequence, a significant reduction of the contact resistance for the transition of charge carriers between the contact material and the organic semiconductor material.