Method and structure for contacting an overlying electrode for a magnetoelectronics element
US6806127B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2002 |
| Grant date | Oct 19, 2004 |
| Priority date | — |
| Expiry date | Dec 5, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
Abstract
A method for contacting an electrically conductive electrode overlying a first dielectric material of a structure is provided. The method includes forming a mask layer overlying the electrically conductive electrode and patterning the mask layer to form an exposed electrically conductive electrode material. At least a portion of the exposed electrically conductive electrode material is removed while an electrically conductive veil is formed adjacent the mask layer. A metal contact layer is formed such that said metal contact layer contacts the electrically conductive veil.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.