Patent · US Expired

Method and structure for contacting an overlying electrode for a magnetoelectronics element

US6806127B2 · kind B2 · utility

4Cited by
14References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 3, 2002
Grant dateOct 19, 2004
Priority date
Expiry dateDec 5, 2022

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N50/01

Abstract

A method for contacting an electrically conductive electrode overlying a first dielectric material of a structure is provided. The method includes forming a mask layer overlying the electrically conductive electrode and patterning the mask layer to form an exposed electrically conductive electrode material. At least a portion of the exposed electrically conductive electrode material is removed while an electrically conductive veil is formed adjacent the mask layer. A metal contact layer is formed such that said metal contact layer contacts the electrically conductive veil.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.