Sidewall processes using alkylsilane precursors for MOS transistor fabrication
US6806149B2 · kind B2 · utility
9Cited by
5References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2002 |
| Grant date | Oct 19, 2004 |
| Priority date | — |
| Expiry date | Nov 13, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
Abstract
A method for using alkylsilane precursors during the sidewall formation process in MOS transistor fabrication processes. Alkylsilane precursors are used to form carbon contain silicon oxide layers (110) and carbon containing silicon nitride layers (120) during the sidewall formation process. The carbon containing layers (110) (120) introduce carbon into the extension regions (100) and the gate region (30) during thermal annealing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.