Methods and apparatus for inducing stress in a semiconductor device
US6806151B2 · kind B2 · utility
57Cited by
25References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2001 |
| Grant date | Oct 19, 2004 |
| Priority date | — |
| Expiry date | Dec 14, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26506
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus are disclosed for selectively inducing stress in a semiconductor device, wherein a first region of a substrate is implanted so as to induce stress in a second region. An electrical device is formed at least partially in the second region, wherein the induced stress therein may improve one or more operational characteristics of the device, such as channel region carrier mobility.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.