Memory cell with a capacitive structure as a control gate and method of forming the memory cell

US6806529B1 · kind B1 · utility

Assignee

• NATIONAL SEMICONDUCTOR CORPORATION · US

Inventors

• Peter J. Hopper · San Jose, US
• Yuri Mirgorodski · San Jose, US
• Andy Strachan · Santa Clara, US

Key dates

• Filing date: Jan 30, 2003
• Grant date: Oct 19, 2004
• Expiry date: Jan 30, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/035

Abstract

In an electrically programmable non-volatile memory cell, the first terminal of a high density capacitive structure is electrically connected to a conductive structure to form a floating gate/first electrode, while the second terminal of the capacitive structure is used as a control gate, providing a cell with a high overall capacitive coupling ratio, a relatively small area, and a high voltage tolerance.