Semiconductor device structure including multiple fets having different spacer widths

US6806584B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Ka-Hing Fung · Hengshan, TW
• Percy V. Gilbert · Austin, US

Key dates

• Filing date: Oct 21, 2002
• Grant date: Oct 19, 2004
• Expiry date: Oct 21, 2022

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S257/90

Abstract

A semiconductor device structure includes at least two field effect transistors formed on same substrate, the first field effect transistor includes a spacer having a first width, the second field effect transistor includes a spacer having a second width, the first width being different than said second width. Preferably, the first width is narrower than the second width.