Magnetic detecting element having &bgr;-values selected for free magnetic layer and pinned magnetic layer
US6806804B2 · kind B2 · utility
12Cited by
3References
27Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 14, 2003 |
| Grant date | Oct 19, 2004 |
| Priority date | — |
| Expiry date | Aug 14, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides a spin valve magnetic detecting element having large &Dgr;R. The positive or negative sign of the &bgr; value of a magnetic material constituting each of a first free magnetic sub-layer, a second free magnetic sub-layer and a pinned magnetic layer is defined so that the resistance values for spin-up conduction electrons are smaller than the resistance values for spin-down conduction electrons in all magnetic layers when magnetization of a free magnetic layer is changed to minimize the resistance value. In this case, the change &Dgr;R in resistance of the magnetic detecting element can be increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.