Magnetic switching element and a magnetic memory
US6807091B2 · kind B2 · utility
51Cited by
2References
21Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 27, 2002 |
| Grant date | Oct 19, 2004 |
| Priority date | — |
| Expiry date | Feb 5, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic switching element includes: a ferromagnetic layer which is substantially pinned in magnetization in one direction; and a magnetic semiconductor layer provided within a range where a magnetic field from the ferromagnetic layer reaches, where the magnetic semiconductor layer changes its state from a paramagnetic state to a ferromagnetic state by applying a voltage thereto, and a magnetization corresponding to the magnetization of the ferromagnetic layer is induced in the magnetic semiconductor layer by applying a voltage to the magnetic semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.