MRAM cell having frustrated magnetic reservoirs
US6807092B1 · kind B1 · utility
5Cited by
3References
34Claims
0Family size
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Inventor
Key dates
| Filing date | Jun 13, 2003 |
| Grant date | Oct 19, 2004 |
| Priority date | — |
| Expiry date | Jun 13, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive random access memory (MRAM) cell, comprising a magnetic tunnel junction having frustrated magnetic reservoirs disposed oppositely along two edges of a free magnetic layer of the junction and magnetized in the same direction that is substantially orthogonal to a free magnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.