Method for controlling a critical dimension (CD) in an etch process
US6808942B1 · kind B1 · utility
8Cited by
4References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 23, 2003 |
| Grant date | Oct 26, 2004 |
| Priority date | — |
| Expiry date | May 23, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for determining resist trim times in an etch process. In one embodiment of the invention, the method for determining resist trim times includes obtaining resist profile data and critical dimension (CD) data of a patterned resist layer using a scatterometer, in a step 520, and then obtaining an estimated trim time of the patterned resist layer using the resist profile data and critical dimension data, in steps 530-550.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.