Method for forming a self-aligned contact hole in a semiconductor device
US6808975B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2003 |
| Grant date | Oct 26, 2004 |
| Priority date | — |
| Expiry date | Jun 30, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/976
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a self-aligned contact hole includes forming a plurality of conductive structures on a semiconductor substrate, each conductive structure including a conductive film pattern and a protection pattern formed on the conductive film pattern, forming a first insulation film to fill a space between adjacent conductive structures, successively etching the first insulation film and the protection patterns until each of the protection patterns has an exposed level upper surface, forming a second insulation film on the resultant structure, and selectively etching portions of the second insulation film and the first insulation film using a photolithography process to form the self-aligned contact hole exposing a portion of the semiconductor substrate between adjacent conductive structures. Process failures generated during formation of a self-aligned contact hole can thus be prevented because a nitride pattern capping a conductive film pattern remains, thereby enhancing reliability and yield of a semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.