Inventor · Suwon-si, KR

Jun Seo

21Patents
7h-index
29Co-inventors
69Inventor score

Filing activity: Apr 19, 1999 → Jul 25, 2018

Most-cited inventions

PatentTitleAreaCited byStatus
US6239022A Method of fabricating a contact in a semiconductor device Electricity 28 Expired
US7531449B2 Method of forming fine patterns using double patterning process Electricity 24 Active
US6573602B2 Semiconductor device with a self-aligned contact and a method of manufacturing the same Electricity 20 Expired
US6097055A Capacitor and method for fabricating the same Electricity 12 Expired
US7723191B2 Method of manufacturing semiconductor device having buried gate Electricity 9 Active
US7745290B2 Methods of fabricating semiconductor device including fin-fet Electricity 8 Active
US6808975B2 Method for forming a self-aligned contact hole in a semiconductor device Emerging Cross-Sectional Technologies 7 Expired
US7524733B2 Asymmetric source/drain transistor employing selective epitaxial growth (SEG) layer and method of fabricating same Emerging Cross-Sectional Technologies 5 Active
US7221023B2 Asymmetric source/drain transistor employing selective epitaxial growth (SEG) layer and method of fabricating same Emerging Cross-Sectional Technologies 4 Expired
US7326619B2 Method of manufacturing integrated circuit device including recessed channel transistor Electricity 4 Expired
US7534704B2 Thin layer structure and method of forming the same Electricity 3 Active
US7863137B2 Methods of fabricating field effect transistors having protruded active regions Electricity 2 Active
US7531414B2 Method of manufacturing integrated circuit device including recessed channel transistor Electricity 2 Active
US8216944B2 Methods of forming patterns in semiconductor devices Electricity 1 Active
US7531450B2 Method of fabricating semiconductor device having contact hole with high aspect-ratio Electricity 0 Active
US10985047B2 Semiconductor manufacturing apparatus and driving method of the same Electricity 0 Active
US7989279B2 Method of fabricating semiconductor device Electricity 0 Active
US7655976B2 Field effect transistors having protruded active regions and methods of fabricating such transistors Electricity 0 Active
US8361849B2 Method of fabricating semiconductor device Electricity 0 Active
US8378395B2 Methods of fabricating field effect transistors having protruded active regions Electricity 0 Active
US6784097B2 Method of manufacturing a semiconductor device with a self-aligned contact Electricity 0 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.