Method for forming a contact opening
US6808984B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 17, 2004 |
| Grant date | Oct 26, 2004 |
| Priority date | — |
| Expiry date | Mar 17, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/95
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a contact opening is provided. After forming transistors on a substrate, a stacked resist layer including a resist layer without a silicon element and a resist layer with a silicon element covers the transistors and the substrate. The stacked resist layer is defined to cover a region of a contact opening to be formed as a mask. A selective growth process, such as a liquid phase oxide deposition (LPOD), is carried out to form a selective silicon oxide layer on the silicon-containing surface and fills the space between the stacked resist layer. After the stacked resist layer is removed, a contact opening is formed in the silicon oxide layer and a step of the etching process is eliminated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.