Meng-Hung Chen
10Patents
4h-index
11Co-inventors
53Inventor score
Filing activity: Aug 27, 2002 → Dec 9, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7449382B2 | Memory device and fabrication method thereof | Electricity | 6 | Active |
| US6767786B1 | Method for forming bottle trenches by liquid phase oxide deposition | Electricity | 5 | Expired |
| US7094672B2 | Method for forming self-aligned contact in semiconductor device | Electricity | 5 | Expired |
| US6808984B1 | Method for forming a contact opening | Emerging Cross-Sectional Technologies | 4 | Expired |
| US6818547B2 | Dual damascene process | Electricity | 3 | Expired |
| US7094658B2 | 3-stage method for forming deep trench structure and deep trench capacitor | Electricity | 2 | Expired |
| US6977210B1 | Method for forming bit line contact hole/contact structure | Electricity | 1 | Expired |
| US10082528B2 | Power detector | Physics | 0 | Active |
| US7084057B2 | Bit line contact structure and fabrication method thereof | Electricity | 0 | Expired |
| US8044449B2 | Memory device with a length-controllable channel | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.