Method of producing a thin layer of semiconductor material
US6809009B2 · kind B2 · utility
319Cited by
31References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2001 |
| Grant date | Oct 26, 2004 |
| Priority date | — |
| Expiry date | Feb 6, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24612
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method of producing a thin layer of semiconductor material including:a step of implanting ions through a flat face (2) of a semiconductor wafer in order to create a layer of microcavities, the ion dose being within a specific range in order to avoid the formation of blisters on the flat face,a thermal treatment step in order to achieve coalescence of the microcavitiesa possibly, a step of creating at least one electronic component (5) in the thin layer (6),a separation step of separating the thin layer (6) from the rest (7) of the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.