Hot plate annealing
US6809035B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 2, 2002 |
| Grant date | Oct 26, 2004 |
| Priority date | — |
| Expiry date | Aug 2, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/943
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A rapid thermal processor, having a process chamber, including a stable heat source in the form of a heatable mass. Heat is provided to the heatable mass using a series of heating devices. The temperature of the heatable mass establishes the temperature of a semiconductor wafer placed in contact or in close proximity to the heatable mass. To reduce thermal gradients, the heatable mass can be included in an insulative compartment made of an insulating material, such as opaque quartz and the like. The top of the insulative compartment can include an access portion to allow the semiconductor wafer to be placed on the heatable mass disposed therein. During processing, the wafer may be further exposed to a high intensity radiation energy source for a short duration of time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.