CMOS image sensor
US6809309B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 18, 2002 |
| Grant date | Oct 26, 2004 |
| Priority date | — |
| Expiry date | Aug 21, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/771
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A CMOS image sensor is disclosed in which a charge storage gate is formed at one side of a photodiode region to increase charge capacity for each cell, thereby improving characteristics of a device. The CMOS image sensor includes a photodiode region generating image signal charges by converting image signals of light to electrical signals, and a charge storage gate formed near the photodiode region, wherein the charges of the photodiode region are partially or entirely transferred to a portion below the charge storage gate when the charges are generated, and the charges stored, when the charges are read out, are transferred to a read out node.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.