Accelerated ion beam generator
US6809310B2 · kind B2 · utility
Inventor
Key dates
| Filing date | Jan 27, 2003 |
| Grant date | Oct 26, 2004 |
| Priority date | — |
| Expiry date | Jan 27, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H3/02
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
A beam of accelerated ions (111) is produced from a quiescent plasma (19) created by diffusing a heated primary plasma (15) through an accelerator/homogenizer structure (17) having a uniform voltage potential VB and a total surface area ARF. The RF-conductive, dielectric coated surfaces of the accelerator/homogenizer structure are quasi-uniformly dispersed throughout the primary plasma. The quiescent plasma has a generally homogenous preselected plasma potential VPA approximately equal to VB. An RF-grounded structure (112) having a total ground surface area AG, wherein ARF>AG, attracts ions from the quiescent plasma to produce the accelerated ion beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.